FDMS86300DC
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Key Features
- DUAL COOL® Top Side Cooling PQFN package
- Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A
- Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS Compliant
