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MOSFET - POWERTRENCH) Single N-Channel, DUAL COOL)
80 V, 3.1 mW, 110 A
FDMS86300DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• DUAL COOL® Top Side Cooling PQFN package • Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A • Max rDS(on) = 4.
FDMS86300DC Datasheet
